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SI7884BDP-T1-GE3

Name: SI7884BDP-T1-GE3
Brand: Vishay
SKU: 322871
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	SI7884BDP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 58A PPAK SO-8
Datasheet	SI7884BDP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	40V
Continuous Drain Current at 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	77nC @ 10V
Max Input Capacitance	3540pF @ 20V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	4.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs	7.5 mOhm @ 16A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	028682-SI7884BDP-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Application Field	Used in Power Management
Family Name	Si7884BDP
Introduction Date	April 17, 2008
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	2022
Ultra Librarian 3D Model	Ultra Librarian SI7884BDP-T1-GE3 CAD Model

Description

The Vishay Si7884BDP is a MOSFET technology-based N-channel polarity product, used for power management.

Case/Package: PowerPAK SO-8
Maximum Gate-Source Voltage: ±20V
Maximum Rds On @ Id, Vgs: 7.5 mOhm @ 16A, 10V
Maximum Gate Charge: 77nC @ 10V
Introduction Date: April 17, 2008
Estimated EOL Date: 2022

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
55+	$0.9117	$50.1435
135+	$0.7481	$100.9935
210+	$0.7247	$152.1870
290+	$0.7014	$203.4060
370+	$0.6780	$250.8600
495+	$0.6078	$300.8610

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 30,000 pieces

MOQ: 55 pcs

Order Increment : 1 pcs

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