The Vishay 028717-SI9945BDY-T1-GE3 is a dual N-channel MOSFET with a logic level gate designed for use in discrete semiconductor products.

• Maximum power dissipation: 3.1W
• Drain-source breakdown voltage: 60V
• Continuous drain current at 25°C: 5.3A
• Gate-source threshold voltage: 3V @ 250μA
• Maximum gate charge: 20nC @ 10V
• Maximum input capacitance: 665pF @ 15V
• Maximum Rds on at Id,Vgs: 58 mOhm @ 4.3A, 10V
• Package: 8-SO case
• Mounting: surface mount technology (SMT)
• Supply and demand status: sufficient
• Quantity per package: 2,500