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SI4830DY

Part No SI4830DY
Manufacturer Vishay
Catalog FETs - Arrays
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Arrays
Win Source Part Number 189980-SI4830DY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4830DY CAD Model

Description

The SI4830DY is an N-Channel MOSFET manufactured by Vishay. It is designed for a wide range of power switching and load management applications. Its key features include a low on-resistance (RDS(on)) and fast switching speeds, which make it well-suited for use in DC-DC converters, power supplies, and motor control circuits. The SI4830DY aims to provide efficient and reliable performance in demanding power applications.

Applications

  • DC-DC Converters
  • Power Supplies
  • Motor Control Circuits
  • Load Switching
  • Battery Management Systems

Features

  • N-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • TrenchFET® Power MOSFET Technology
  • Logic Level Gate Drive
  • RoHS Compliant
  • Halogen-Free According to IEC 61249-2-21 Definition
  • Surface Mount Package (PowerPAK® SO-8)

Benefits

  • High Efficiency: Low RDS(on) minimizes conduction losses, resulting in improved efficiency and reduced heat generation.
  • Fast Switching: Enables higher operating frequencies and reduces switching losses in power conversion circuits.
  • Logic Level Compatibility: Allows direct interface with logic circuits, simplifying design and reducing component count.
  • Compact Footprint: The surface mount package allows for high-density board layouts.
  • Enhanced Thermal Performance: The PowerPAK® SO-8 package provides good thermal conductivity, enabling efficient heat dissipation.

Additional Details

The SI4830DY is housed in a PowerPAK® SO-8 package. Important electrical parameters include the drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). The specific values for these parameters are dependent on temperature and application conditions. Designers should refer to the datasheet for detailed electrical characteristics, thermal resistance data, and application guidelines.

Proper gate drive design, thermal management, and overvoltage protection are crucial for ensuring reliable operation. This MOSFET is designed to minimize gate charge and gate resistance, contributing to improved switching performance. It's important to adhere to the recommended operating conditions and follow best practices for PCB layout to achieve optimal performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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