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IRFBC40PBF

Part No IRFBC40PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.2A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069466-IRFBC40PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC40PBF CAD Model

Description

The Vishay IRFBC40PBF N-channel MOSFET is ideal for use in a variety of applications.

  • Maximum Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.2A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting: Through-hole
  • Product Family: Discrete Semiconductor Products
  • Package: Tube/rail
  • Case/Package: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1049 $55.2450
100+ $1.0349 $103.4900
150+ $1.0000 $150.0000
220+ $0.9300 $204.6000
280+ $0.8951 $250.6280
350+ $0.8601 $301.0350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,566 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipping Information

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