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IPB067N08N3G

Part No IPB067N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
Shipping Restrictions Mouser does not presently sell this product in your region.
RoHS Details
REACH - SVHC Details
Technology Si
Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 6.7 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2.8 V
Qg - Gate Charge 56 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 8 ns
Product Type MOSFETs
Rise Time 66 ns
Series OptiMOS 3
Factory Pack Quantity Factory Pack Quantity 1000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 31 ns
Typical Turn-On Delay Time 16 ns
Part # Aliases SP000443636 IPB67N8N3GXT IPB067N08N3GATMA1
Unit Weight 0.139332 oz
Ultra Librarian 3D Model Ultra Librarian IPB067N08N3G CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 343 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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