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BSS192P H6327

Part No BSS192P H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSS192P H6327 Infineon Technologies MOSFETs P-Ch -250V -190mA SOT-89-3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-89-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 190 mA
Rds On - Drain-Source Resistance 7.7 Ohms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 6.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 50 ns
Forward Transconductance - Min 190 mS
Product Type MOSFETs
Rise Time 5.2 ns
Series BSS192
Factory Pack Quantity Factory Pack Quantity 1000
Subcategory Transistors
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 4.7 ns
Part # Aliases SP001047642 BSS192PH6327FTSA1
Unit Weight 0.004603 oz
Ultra Librarian 3D Model Ultra Librarian BSS192P H6327 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,961 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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