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SSM3K376R,LF

Part No SSM3K376R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT23F / N-Channel 30 V 4A (Ta) 2W (Ta) Surface Mount SOT-23F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII-H
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 4.5 V
Vgs (Max) +12V, -8V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package SOT-23F
Package / Case SOT-23-3 Flat Leads
Base Product Number SSM3K376
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SSM3K376RLFTR,SSM3K376RLFDKR,SSM3K376RLFCT,SSM3K376R,LF(B
Standard Package 3,000
Win Source Part Number 1096295-SSM3K376R,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K376R,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K376R,LF is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Rds On: 56mOhm @ 2A and 4.5V
  • Maximum Vgs(th): 1V @ 1mA
  • Maximum Gate Charge: 2.2nC @ 4.5V
  • Maximum Input Capacitance: 200pF @ 10V
  • Maximum Temperature: 150°C
  • Package: SOT-23-3 flat leads package

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3272 $50.7160
375+ $0.2685 $100.6875
580+ $0.2601 $150.8580
795+ $0.2517 $200.1015
1,030+ $0.2434 $250.7020
1,375+ $0.2182 $300.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 660 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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