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Same model may have multiple batches, images only for reference.
SIB900EDK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB900EDK-T1-GE3

Part No SIB900EDK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.5A SC-75-6
Datasheet
SIB900EDK-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 225 mOhm @ 1.6A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 1.7nC @ 4.5V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-75-6L Dual
Win Source Part Number 028737-SIB900EDK-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SIB900EDK-T1-GE3 CAD Model

Description

The Vishay SIB900EDK-T1-GE3 dual N-channel FET from Vishay is a high-performance transistor designed for use in electronic circuits.

  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 20V
  • Package: PowerPAK SC-75-6L Dual
  • ECCN: EAR99 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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Availability: 12,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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