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SI9433BDY-T1-E3

Part No SI9433BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R / MOSFET P-CH 20V 4.5A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 14nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 6.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028714-SI9433BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si9433BDY
Introduction Date February 12, 2004
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI9433BDY-T1-E3 CAD Model

Description

The Vishay Si9433BDY is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.3W
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 6.2A, 4.5V
  • Package: 8-SOIC

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,492 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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