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Same model may have multiple batches, images only for reference.
SIA912DJ-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIA912DJ-T1-GE3

Part No SIA912DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 4.5A SC70-6
Datasheet
SIA912DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.2A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11.5nC @ 8V
Max Input Capacitance 400pF @ 6V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 102510-SIA912DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA912DJ-T1-GE3 CAD Model

Description

The Vishay 102510-SIA912DJ-T1-GE3 is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Package: PowerPAK SC-70-6 Dual
  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 11.5nC @ 8V
  • Maximum Input Capacitance: 400pF @ 6V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6553 $57.9355
90+ $1.3583 $122.2470
135+ $1.3159 $177.6465
185+ $1.2734 $235.5790
235+ $1.2310 $289.2850
315+ $1.1036 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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