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Same model may have multiple batches, images only for reference.
SIA447DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA447DJ-T1-GE3

Part No SIA447DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 12A SC-70-6L
Datasheet
SIA447DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 80nC @ 8V
Max Input Capacitance 2880pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028728-SIA447DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA447DJ-T1-GE3 CAD Model

Description

The Vishay 028728-SIA447DJ-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 12V and a continuous drain current of 12A at 25°C.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 12A @ 25°C
  • Maximum Rds On: 13.5 mOhm @ 7A, 4.5V
  • Gate-Source Threshold Voltage: 850mV @ 250μA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 80nC @ 8V
  • Power Dissipation: 3.5W (Ta) and 19W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK SC-70-6 Single

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Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
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