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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 50V
Power Dissipation (Maximum) 140W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261700-STP21NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP21NM60N CAD Model

Description

The STP21NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of the MDmesh™ II series that employs innovative technology to achieve low on-resistance, high blocking voltage, and enhanced switching performance. The device is designed to address a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters.

Key Features:

  • High Blocking Voltage: With a drain-source voltage (V<sub>DS) of 600V, the STP21NM60N can handle high voltage applications, providing robust performance for industrial and consumer electronics.
  • Low On-Resistance: The device features a very low on-state resistance (R<sub>DS(on)) of 0.19Ω, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: It is capable of sustaining a continuous drain current (I<sub>D) of 20A, making it suitable for high-power applications.
  • Improved Switching Performance: The fast switching characteristics of this MOSFET reduce switching losses and enhance power efficiency, especially in high-frequency circuits.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) facilitates faster switching and reduces the power required to drive the MOSFET.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under extreme conditions.
  • Zener-Protected: The gate-source is protected by a built-in Zener diode, which provides protection against electrostatic discharge (ESD) and enhances the ruggedness of the device.

Applications:

  • Switch-mode power supplies (SMPS)
  • LED lighting applications
  • High-efficiency DC/DC converters
  • Motor control circuits
  • Welding equipment
  • Power factor correction (PFC) circuits

The STP21NM60N is presented in a TO-220 package, which is widely used for commercial and industrial power applications due to its robustness and excellent thermal performance. With these features and benefits, the STP21NM60N from STMicroelectronics is an ideal choice for designers looking to enhance the efficiency, reliability, and performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.6040 $65.1000
61+ $2.1371 $130.3631
94+ $2.0698 $194.5612
130+ $2.0038 $260.4940
168+ $1.9365 $325.3320
224+ $1.7360 $388.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,000 pieces
MOQ: 25 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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