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STL4N80K5

Part No STL4N80K5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description MOSFET N-CH 800V 8POWERFLAT / Ultra low gate charge
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5Ohm at 1.5A, 10V
Vgs(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 10.5nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 175pF at 100V
Power Dissipation (Maximum) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerFlat (5x6)
Manufacturer Package 8-PowerVDFN
Part Number Series STL4
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804721-STL4N80K5
Ultra Librarian 3D Model Ultra Librarian STL4N80K5 CAD Model

Description

STL4N80K5 - N-channel 800 V, 3.3 Ω typ., 4 A SuperMESH™ 5 Power MOSFET in a PowerFLAT 5x6 package

The STL4N80K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed with the state-of-the-art SuperMESH™ 5 technology. This advanced power MOSFET is tailored for applications that demand high efficiency and power density. It is housed in a compact and innovative PowerFLAT 5x6 package, which offers excellent thermal performance and is suitable for space-constrained applications.

With a drain-source voltage (VDS) of 800 V, the STL4N80K5 is well-suited for high-voltage applications, ensuring robustness and reliability in operations. It features an extremely low on-resistance (RDS(on)) of just 3.3 Ω typical, which significantly reduces conduction losses and improves overall efficiency. The device can handle a continuous drain current (ID) of up to 4 A, making it capable of driving moderate loads with ease.

The SuperMESH™ 5 technology combines a new vertical structure with a proprietary edge termination structure, which minimizes the RDS(on) area while maintaining a high level of ruggedness and reliability. This technology also provides an enhanced dv/dt capability, ensuring safe operation even under harsh switching conditions.

STL4N80K5's built-in Zener diode provides Gate-Source protection, enhancing the robustness of the device against over-voltages. This feature, along with the 100% avalanche tested guarantee, provides designers with a margin of safety for the most demanding scenarios. Additionally, the MOSFET is compliant with the European Union's stringent RoHS and Halogen-Free directives, making it an environmentally friendly choice for power management solutions.

Applications for the STL4N80K5 are diverse and include switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and power management tasks in consumer and industrial electronics. Its high energy efficiency, reliability, and compact form factor make it an ideal choice for engineers looking to optimize their power designs.

Overall, the STL4N80K5 from STMicroelectronics is a robust and efficient solution for modern high-voltage power applications, offering low on-state resistance, high-speed switching, and a compact package for optimized power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4886 $52.1010
85+ $1.2214 $103.8190
130+ $1.1833 $153.8290
175+ $1.1451 $200.3925
230+ $1.1069 $254.5870
305+ $0.9924 $302.6820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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