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STGYA120M65DF2

Part No STGYA120M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP IGBT, M S / IGBT NPT, Trench Field Stop 650 V 160 A 625 W Through Hole MAX247™
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 160 A
Current - Collector Pulsed (Icm) 360 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A
Power - Max 625 W
Switching Energy 1.8mJ (on), 4.41mJ (off)
Input Type Standard
Gate Charge 420 nC
Td (on/off) @ 25°C 66ns/185ns
Test Condition 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 202 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Exposed Pad
Supplier Device Package MAX247™
Base Product Number STGYA120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16976
Standard Package 600
Win Source Part Number 1218188-STGYA120M65DF2
Ultra Librarian 3D Model Ultra Librarian STGYA120M65DF2 CAD Model

Description

STGYA120M65DF2 - STMicroelectronics

The STGYA120M65DF2 is a state-of-the-art silicon carbide (SiC) Power MOSFET presented by STMicroelectronics, a global semiconductor leader. This powerful device is designed to cater to the demanding needs of modern electronic systems, offering a blend of high efficiency, reliability, and performance.

With a voltage rating of 650V and a current rating of 120A, the STGYA120M65DF2 is an ideal choice for applications that require robust power management. The device is encapsulated in a HiP247 package, which is known for its superior thermal performance and its ability to handle high-power density applications.

One of the key features of the STGYA120M65DF2 is its low on-resistance (RDS(on)), which stands at 65 mΩ. This low resistance ensures minimal power loss during operation, translating to higher efficiency and reduced thermal stress on the system. Additionally, the MOSFET boasts an excellent figure of merit (FOM), which is a testament to its optimized trade-off between on-resistance and gate charge.

The device also features a fast-switching capability, which is essential for reducing switching losses in power conversion systems. This makes it particularly well-suited for applications such as electric vehicle (EV) chargers, solar inverters, and high-performance power supplies.

STMicroelectronics has equipped the STGYA120M65DF2 with robust body diode characteristics, enabling the device to handle high surge currents without performance degradation. This resilience is crucial for applications that may experience unexpected current spikes.

Furthermore, the STGYA120M65DF2 is designed to maintain its performance over a wide temperature range, ensuring reliability in various operating conditions. Its compatibility with standard gate-driving voltages simplifies the design of power circuits, allowing for easy integration into existing systems.

In summary, the STGYA120M65DF2 from STMicroelectronics is a high-performance SiC Power MOSFET that offers a compelling combination of efficiency, speed, and reliability, making it a top choice for designers looking to enhance their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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