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Same model may have multiple batches, images only for reference.
IRG4BC30F Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30F

Part No IRG4BC30F
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) | IGBT 600V 31A 100W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 31A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 17A
Maximum Power 100W
Switching Energy 230μJ (on), 1.18mJ (off)
Input Type Standard
Gate Charge 51nC
Td (on/off) at 25°C 21ns/200ns
Test Condition 480V, 17A, 23Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188235-IRG4BC30F
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC30F CAD Model

Description

The Infineon Technologies IGBT transistor, part number IRG4BC30F, is a through-hole mounting style component that is categorized as a discrete semiconductor product.

  • Manufacturer: Infineon Technologies
  • Mounting Style: Through-Hole
  • Category: Discrete Semiconductor
  • Status: Obsolete
  • Supply and Demand Status: Limited
  • IGBT Type: Not Specified
  • Maximum Collector Current: 31A
  • Voltage Between Collector and Emitter Breakdown: 600V
  • Maximum Power: 100W
  • Gate Charge: 51nC
  • Switching Energy (On): 230μJ
  • Switching Energy (Off): 1.18mJ
  • Test Conditions: 480V, 17A, 23Ohm, 15V
  • Switching Time: 21ns/200ns
  • Operating Temperature Range: -55°C to 150°C
  • Package Type: TO-220AB
  • Pack Quantity: 50

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