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STGWT40HP65FB

Part No STGWT40HP65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trench gate field-stop IGBT, HB series 650 V, 40 A high speed | TRENCH GATE FIELD-STOP IGBT, HB
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 40A
Maximum Power 283W
Switching Energy 363μJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) at 25°C -/142ns
Test Condition 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 140ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Manufacturer Pack Quantity 600
MSL Level 1 (Unlimited)
Win Source Part Number 1261059-STGWT40HP65FB
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGWT40HP65FB CAD Model

Description

STGWT40HP65FB - High-Efficiency IGBT from STMicroelectronics

The STGWT40HP65FB is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed for a wide range of high-power applications. This IGBT features a 650V collector-emitter voltage and a 40A nominal current rating, making it an excellent choice for energy-efficient power conversion in both industrial and consumer electronics.

Constructed using STMicroelectronics' advanced trench gate field-stop technology, the STGWT40HP65FB offers an optimal trade-off between switching performance and on-state behavior. This balance ensures low conduction and switching losses, which are critical for high-efficiency power management. The device's enhanced thermal characteristics also contribute to its reliability and longevity, even under stressful operating conditions.

The STGWT40HP65FB comes in a TO-247 long leads package, which is not only robust but also facilitates easy mounting and heat sinking. This package is well-suited for applications requiring high current and high voltage operation, providing excellent isolation and thermal performance.

One of the key features of this IGBT is its co-packaged fast recovery anti-parallel diode. The inclusion of this diode simplifies the design process by reducing component count and improving system reliability. It also enhances the efficiency of the device by minimizing recovery losses during switching events, which is particularly beneficial in applications like motor drives, UPS systems, solar inverters, and welding equipment.

Additionally, the STGWT40HP65FB is characterized by a very tight parameter distribution, which results in simplified drive circuitry and predictable performance. Its low gate charge and threshold voltage enable easy drive and further contribute to the overall system efficiency.

Engineers looking for an IGBT that offers high power density, efficiency, and reliability will find the STGWT40HP65FB to be an ideal choice. Its advanced features and robust design make it a versatile component that can be used in a multitude of high-performance power applications.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the official STMicroelectronics website or contact their support team for technical assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0361 $51.6137
36+ $2.8439 $102.3804
55+ $2.7478 $151.1290
79+ $2.5557 $201.9003
102+ $2.4596 $250.8792
127+ $2.3635 $300.1645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,465 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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