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STGF4M65DF2

Part No STGF4M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 8 A
Current - Collector Pulsed (Icm) 16 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Power - Max 23 W
Switching Energy 40µJ (on), 136µJ (off)
Input Type Standard
Gate Charge 15.2 nC
Td (on/off) @ 25°C 12ns/86ns
Test Condition 400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr) 133 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FP
Base Product Number STGF4
Other Names 497-16965
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277359-STGF4M65DF2
Ultra Librarian 3D Model Ultra Librarian STGF4M65DF2 CAD Model

Description

The STGF4M65DF2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to deliver high efficiency and robust performance for a wide range of power applications. This IGBT is part of the STPOWER™ family, which is renowned for its superior power handling capabilities and reliability.

Key Features

  • High Voltage Capability: The STGF4M65DF2 is rated for a maximum collector-emitter voltage of 650V, making it suitable for high voltage applications that require efficient power conversion and control.
  • Low On-State Voltage: With a low V<sub>CE(sat) of typically 1.55 V at I<sub>C = 4 A, this IGBT ensures reduced conduction losses and improved overall efficiency.
  • High Current Rating: It can handle continuous collector currents up to 4 A, with peak current handling capability significantly higher, ensuring suitability for heavy-load conditions.
  • Fast Switching Speed: The device offers fast switching characteristics, which is crucial for reducing switching losses and enhancing performance in high-frequency operations.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery anti-parallel diode, which provides additional protection against reverse voltage transients and reduces component count in circuit designs.

Applications

The STGF4M65DF2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Power Inverter Systems
  • Inductive Heating and Welding Equipment

Quality and Reliability

STMicroelectronics ensures that the STGF4M65DF2 meets the highest quality and reliability standards. The device is subjected to rigorous testing and validation processes, guaranteeing performance even under harsh conditions. It is also designed to offer excellent ruggedness and thermal performance, which is essential for maintaining longevity and stability in power electronic systems.

With its combination of high voltage capability, low on-state voltage, fast switching, and a co-packaged diode, the STGF4M65DF2 is an ideal choice for designers looking to optimize their power electronic systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.1610 $51.6100
24+ $4.2346 $101.6304
37+ $4.1023 $151.7851
51+ $3.9700 $202.4700
66+ $3.8376 $253.2816
88+ $3.4407 $302.7816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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