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STGWA40H120DF2

Part No STGWA40H120DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE IGBT TO247 PKG / Very fast recovery antiparallel diode
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 40A
Power - Max 468W
Switching Energy 1mJ (on), 1.32mJ (off)
Input Type Standard
Gate Charge 158nC
Td (on/off) at 25°C 18ns/152ns
Test Condition 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 488ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Part Number Series STGWA40
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812562-STGWA40H120DF2
Ultra Librarian 3D Model Ultra Librarian STGWA40H120DF2 CAD Model

Description

The STGWA40H120DF2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to offer superior switching performance and high robustness for a wide range of power applications. This device is part of the advanced Trench Gate Field-Stop IGBTs, which are known for their exceptional efficiency and reliability.

Key Features

  • High Current Capability: With a maximum continuous collector current of 40A at 25°C, this IGBT can handle significant power levels, making it suitable for demanding applications.
  • High Voltage Rating: A collector-emitter voltage (VCE) rating of 1200V provides a comfortable margin for applications with high voltage requirements.
  • Low On-State Voltage Drop (VCE(sat)): This parameter is minimized to ensure lower conduction losses and improved efficiency during operation.
  • Short-Circuit Withstand Time: The device is capable of withstanding short-circuit conditions for a specified time, enhancing its robustness and reliability in the field.
  • Co-Packaged Diode: The inclusion of a free-wheeling diode in the package reduces component count and simplifies circuit design.

Applications

The STGWA40H120DF2 is ideal for a variety of high-performance applications, including:

  • Uninterruptible Power Supplies (UPS)
  • High-performance inverters for motor drives
  • Power factor correction circuits
  • Welding equipment
  • Inductive heating systems
  • Solar inverters

Advanced Technology

STMicroelectronics has integrated its advanced Trench Gate Field-Stop technology into the STGWA40H120DF2, which provides lower conduction and switching losses. This technology, combined with the device's optimized turn-off energy, results in improved overall efficiency and thermal performance. The device's fast recovery diode is specifically designed to handle high-frequency operations, making it an excellent choice for modern high-efficiency power electronic systems.

Package and Quality

Encased in a TO-247 long leads package, the STGWA40H120DF2 ensures excellent thermal performance and ease of mounting on heat sinks. STMicroelectronics' commitment to quality is reflected in the rigorous testing and reliability measures applied to each IGBT, ensuring that customers receive a product that meets the highest industry standards for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6158 $52.3160
47+ $2.1463 $100.8761
73+ $2.0793 $151.7889
100+ $2.0122 $201.2200
129+ $1.9451 $250.9179
173+ $1.7439 $301.6947
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,850 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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