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STGP14N60D

Part No STGP14N60D
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series PowerMESH™
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 25 A
Current - Collector Pulsed (Icm) 50 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
Power - Max 95 W
Input Type Standard
Test Condition 390V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr) 37 ns
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP14
Other Names 497-8898-5
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277334-STGP14N60D
Ultra Librarian 3D Model Ultra Librarian STGP14N60D CAD Model

Description

STGP14N60D - N-channel 600 V, 14 A, Low drop IGBT by STMicroelectronics

The STGP14N60D is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics. This N-channel IGBT is optimized for a wide array of power applications, particularly excelling in AC/DC converters, motor drives, and other high-efficiency, high-switching-speed systems. With a robust and advanced construction, the STGP14N60D is engineered to deliver exceptional performance and reliability.

Key Features

  • High Voltage Capability: The STGP14N60D operates at a collector-emitter voltage of 600 V, making it suitable for high-voltage applications.
  • High Current Rating: With a continuous collector current rating of 14 A, this IGBT can handle significant power levels, contributing to its versatility in various power circuits.
  • Low On-Voltage Drop (VCE(sat)): The device features a low saturation voltage of typically 2.1 V, which reduces conduction losses and increases the efficiency of the overall system.
  • Fast Switching Speed: The IGBT is designed for fast switching, which is essential for reducing switching losses and improving performance in high-frequency applications.
  • High Input Impedance: The gate of the STGP14N60D is insulated from the semiconductor material by a thin layer of oxide, resulting in high input impedance and minimal gate drive losses.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Welding Equipment

The STGP14N60D is designed to offer a combination of low conduction and switching losses. The device's construction features a co-packaged freewheeling diode, which is highly efficient and helps in reducing the number of components required in a design. This IGBT is also characterized by a tight parameter distribution, which translates into better consistency and reliability in performance.

STMicroelectronics provides comprehensive technical support and documentation for the STGP14N60D, including datasheets, application notes, and design resources, ensuring that engineers can optimize their designs to take full advantage of the device's capabilities. With its robust design and superior electrical characteristics, the STGP14N60D stands out as a high-quality component for power electronic systems requiring high efficiency and power density.

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