The STF28N60M2 is a state-of-the-art, high-performance N-channel 600V Power MOSFET produced using STMicroelectronics' advanced MDmesh™ M2 technology. This power MOSFET is designed to meet the rigorous demands of today's power electronics applications, offering low on-resistance, high blocking voltage capability, and superior switching performance.

Key Features

• Voltage: The device is rated for a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
• Current: It can handle continuous drain current (I_D) up to 20A, ensuring reliable performance in demanding situations.
• R_DS(on): The STF28N60M2 boasts a low on-state resistance, typically 0.165 Ω, which translates to reduced conduction losses and improved power efficiency.
• Gate Charge: It features an optimized gate charge (Q_g) that enhances the switching performance while minimizing switching losses.
• Body Diode: The device includes an intrinsic fast-recovery body diode which contributes to the reduction of reverse recovery time and losses.

Applications

The STF28N60M2 is ideal for a broad range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Solar Inverters
• Electric Vehicle (EV) Charging Stations

Package and Quality

Encased in a TO-220FP package, the STF28N60M2 is not only robust but also ensures efficient heat dissipation for improved thermal management. The product is designed and tested to meet the highest quality and reliability standards, making it suitable for industrial-grade applications that require long-term stability and endurance.

Environmental Compliance

STMicroelectronics is committed to environmental sustainability. The STF28N60M2 complies with the RoHS directive and is free from environmentally hazardous substances, making it a safe choice for electronic manufacturers looking to create eco-friendly products.