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F9NM50N

Part No F9NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 570pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 560 mOhm @ 3.7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066729-F9NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian F9NM50N CAD Model

Description

STMicroelectronics F9NM50N N-Channel MOSFET Overview

The F9NM50N is a high-performance N-channel MOSFET produced by STMicroelectronics, a leading company in the semiconductor industry. This component is designed for a wide range of applications, including power supply, lighting, motor control, and industrial purposes. The F9NM50N is part of STMicroelectronics' MDmesh™ series, which is renowned for its excellent energy efficiency and thermal performance.

Key Features

  • High Voltage Capability: The F9NM50N is capable of handling high voltages, with a drain-source voltage (V<sub>DS) of up to 500V, making it suitable for various power applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of typically 0.65Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High Current Rating: The device has a continuous drain current (I<sub>D) rating of up to 9A, allowing it to handle significant power levels.
  • Reduced Gate Charge: The F9NM50N features a low gate charge (Q<sub>g), which enhances the switching performance and reduces switching losses.
  • 100% Avalanche Tested: This guarantees robustness and reliability in applications where the MOSFET may experience high-energy pulses.

Applications

  • Switching power supplies
  • LED lighting systems
  • High-efficiency DC/DC converters
  • Motor control circuits
  • Power management solutions

Package and Mounting

The F9NM50N comes in a TO-220 package, which is widely used for power devices due to its ability to handle high current and dissipate heat effectively. The package is suitable for through-hole mounting, which is beneficial for applications requiring strong mechanical anchoring and easy heatsinking.

Conclusion

STMicroelectronics' F9NM50N is an exceptional N-channel MOSFET that combines high voltage capability, low on-resistance, and efficient switching characteristics. It is designed to meet the demands of modern high-performance power applications, offering both reliability and energy efficiency. Whether for industrial, commercial, or consumer electronics, the F9NM50N is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4717 $59.3208
57+ $2.0282 $115.6074
89+ $1.9647 $174.8583
122+ $1.9023 $232.0806
158+ $1.8388 $290.5304
211+ $1.6482 $347.7702
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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