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Same model may have multiple batches, images only for reference.
IXFH15N60 Real Image
Same model may have multiple batches, images only for reference.

IXFH15N60

Part No IXFH15N60
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs
Datasheet
IXFH15N60 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 500 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AD (IXFH)
Package TO-247-3
RoHS State Request Verification
Win Source Part Number 1191052-IXFH15N60
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFH15N60
Introduction Date October 09, 2000
ECCN EAR99
Estimated EOL Date 2019
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXFH15N60 CAD Model

Description

The IXYS 1191052-IXFH15N60 is a HiPerFET N-Channel MOSFET transistor with a drain-source voltage of 600V and a continuous drain current of 15A.

  • Manufacturer: IXYS
  • Type: HiPerFET N-Channel MOSFET
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 15A
  • Maximum Rds On: 500 mOhm @ 500mA, 10V
  • Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 170nC @ 10V
  • Input Capacitance: 4500pF @ 25V
  • Package: TO-247-3
  • Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 150°C

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