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IXFT52N30Q

Part No IXFT52N30Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5300pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 1191141-IXFT52N30Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFT52N30Q
Introduction Date September 26, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFT52N30Q CAD Model

Description

The IXYS HiPerFET IXFT52N30Q is a N-channel MOSFET with a continuous drain current of 52A (Tc) @ 25°C.

  • Continuous Drain Current: 52A (Tc) @ 25°C
  • Maximum Drain-Source Voltage: 300V
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 5300pF @ 25V
  • Maximum Power Dissipation: 360W (Tc)
  • Maximum Rds On: 60 mOhm @ 500mA, 10V
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Mounting: SMD technology
  • Family: HiPerFET
  • Popularity: Medium
  • Introduction Date: September 26, 2000
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $32.6415 $65.2830
5+ $26.7833 $133.9165
7+ $25.9459 $181.6213
10+ $25.1097 $251.0970
12+ $24.2723 $291.2676
16+ $21.7614 $348.1824
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Availability: 573 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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