The 2SC4172M-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor offers a perfect blend of low power consumption and high efficiency, making it an ideal choice for designers looking to optimize their circuitry for energy-sensitive projects.

Key Features

• High Current Gain Bandwidth Product: The 2SC4172M-E provides a high fT, which is beneficial for applications requiring fast switching and accurate amplification at high frequencies.
• Low Saturation Voltage: This transistor has a low V<sub>CE(sat), reducing power loss and improving efficiency, particularly in saturation drive applications.
• High Power Dissipation: With its robust power dissipation capabilities, the 2SC4172M-E can handle higher currents and dissipate more heat, making it suitable for power-intensive applications.
• Complementary PNP Type Available: ON Semiconductor offers a complementary PNP transistor, which allows for the creation of push-pull amplifier configurations, enhancing design flexibility.

Applications

The 2SC4172M-E is designed for general-purpose amplifier and switching applications. Its characteristics make it suitable for:

• Audio amplifiers and preamplifiers
• Signal processing circuits
• Power management systems
• DC-DC converters
• Motor control circuits

Product Specifications

The ON Semiconductor 2SC4172M-E is a reliable and efficient solution for designers seeking to enhance their electronic designs with a high-quality, general-purpose transistor.