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2N7002VA

Part No 2N7002VA
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | MOSFET 2N-CH 60V 0.28A SOT563F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 280mA
Rds On (Maximum) at Id, Vgs 7.5Ohm at 50mA, 5V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Maximum Power 250mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-563, SOT-666
Supplier Device Package SOT-563F
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124251-2N7002VA
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002VA CAD Model

Description

ON Semiconductor 2N7002VA N-Channel MOSFET

The 2N7002VA from ON Semiconductor is a versatile and high-performance N-Channel MOSFET that is designed to meet a wide range of applications. This compact and efficient MOSFET is a perfect solution for portable electronics, power management systems, and various switching applications where space is at a premium and low power consumption is essential.

With its SOT-23 package, the 2N7002VA offers a minimal footprint on PCBs, making it an ideal choice for space-constrained applications. Despite its small size, this MOSFET does not compromise on power, with a drain-source voltage (V<sub>DS) of 60V and a continuous drain current (I<sub>D) of 115 mA. These specifications ensure that the 2N7002VA can handle significant power for its size, providing designers with a reliable and efficient component for their circuits.

The 2N7002VA boasts a low on-resistance (R<sub>DS(on)), which translates to reduced power losses during operation, enhancing overall system efficiency. This feature, combined with its fast switching speed, makes the 2N7002VA an excellent choice for high-speed switching applications, contributing to energy savings and improved performance.

Furthermore, the 2N7002VA is characterized by its robustness, with built-in ESD protection that safeguards the device from electrostatic discharges, ensuring a longer operational lifespan and reliability in sensitive environments. This protection is crucial for maintaining the integrity of electronic components in today's increasingly electronic world.

ON Semiconductor's commitment to quality is evident in the 2N7002VA, which is designed and manufactured to meet the highest standards of performance and reliability. Whether used in power conversion, load switching, or as a part of a more complex integrated circuit, the 2N7002VA is a solid choice for designers looking for a MOSFET that combines efficiency, power, and compactness.

In summary, the 2N7002VA N-Channel MOSFET from ON Semiconductor is an exemplary component that offers a balance of power, efficiency, and size, making it suitable for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,200 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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