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TSM200N03DPQ33

Part No TSM200N03DPQ33
Manufacturer Taiwan Semiconductor
Catalog FETs - Arrays
Description 30V, 20A, DUAL N-CHANNEL POWER M
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
Power - Max 20W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PDFN (3x3)
Base Product Number TSM200
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380161-TSM200N03DPQ33
Ultra Librarian 3D Model Ultra Librarian TSM200N03DPQ33 CAD Model

Description

The TSM200N03DPQ33 is a N-Channel MOSFET array manufactured by Taiwan Semiconductor Corporation.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 20A @ 25°C
  • On-Resistance (Rds On): 20mOhm @ 10A and 10V gate-source voltage (Vgs)
  • Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA
  • Gate Charge (Qg): 4.1nC @ 4.5V gate-source voltage (Vgs)
  • Input Capacitance (Ciss): 345pF @ 25V drain-source voltage (Vds)
  • Maximum Power Dissipation: 20W
  • Package: 8-PowerWDFN
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1233 $61.7815
130+ $0.9217 $119.8210
195+ $0.8930 $174.1350
270+ $0.8641 $233.3070
350+ $0.8353 $292.3550
465+ $0.7489 $348.2385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,960 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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