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IRG4BC15MD

Part No IRG4BC15MD
Manufacturer International Rectifier
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A)
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Rohs State Need to verify
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1188216-IRG4BC15MD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC15MD CAD Model

Description

The IRG4BC15MD is a 600V, 33A Insulated Gate Bipolar Transistor (IGBT) from International Rectifier (now Infineon Technologies). This IGBT is designed for medium frequency switching applications requiring high efficiency and fast switching speeds. It's commonly used in power conversion and motor control applications.

Applications

  • Uninterruptible Power Supplies (UPS): Used in UPS systems for power switching and inversion.
  • Welding machines: Used in welding inverters for power control.
  • Induction heating: Used in induction heating systems for high-frequency power switching.
  • Power factor correction (PFC) circuits: Used in PFC circuits to improve power quality.
  • Motor drives: Used in AC and DC motor drives for controlling motor speed and torque.

Features

  • 600V Blocking Voltage: Can withstand voltages up to 600V.
  • 33A Continuous Collector Current: Can handle continuous currents up to 33A at a specified temperature.
  • Fast Switching Speed: Offers fast switching speeds, reducing switching losses.
  • Low VCE(on): Features a low collector-emitter saturation voltage, reducing conduction losses.
  • Short Circuit Ruggedness: Designed to withstand short circuit conditions for a specified duration.
  • Isolated Package: Provides electrical isolation between the device and the heatsink (depending on package style).

Benefits

  • High Efficiency: Minimizes power losses due to its low VCE(on) and fast switching speed.
  • Reliable Operation: Offers robust performance and long-term reliability.
  • Simplified Design: Simplifies circuit design compared to using discrete components.
  • Reduced Heat Sink Requirements: Reduces the size and cost of the required heatsink due to its efficient operation.
  • Improved System Performance: Enhances the performance of power conversion systems through efficient power switching.

Additional Details: The IRG4BC15MD's gate drive requirements, switching frequency, and thermal resistance are important parameters to consider. The datasheet contains detailed specifications for these parameters, as well as information on safe operating area (SOA) and application circuit examples. Proper gate drive circuitry and thermal management are crucial for reliable operation.

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