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IRF7329TRPBF real image276

IRF7329TRPBF real image276

IRF7329TRPBF Real Image

Same model may have multiple batches, images only for reference.

IRF7329TRPBF real image276

IRF7329TRPBF Real Image

Same model may have multiple batches, images only for reference.

IRF7329TRPBF

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRF7329TRPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	MOSFET 2P-CH 12V 9.2A 8-SOIC
Datasheet	IRF7329TRPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Infineon Technologies
Series	HEXFET
Packaging	Reel(TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	9.2A
Rds On (Max) @ Id, Vgs	17 mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Gate Charge (Qg) @ Vgs	57nC @ 4.5V
Input Capacitance (Ciss) @ Vds	3450pF @ 10V
Power - Max	2W
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	SMD/SMT
Package	8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package	8-SO
Win Source Part Number	017507-IRF7329TRPBF
Family Name	IRF7329
Introduction Date	January 29, 2004
ECCN	EAR99
Country of Origin	China
Estimated EOL Date	Not Applicable
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7329TRPBF CAD Model

Description

The Infineon Technologies 017507-IRF7329TRPBF is a dual P-Channel MOSFET with a drain-source voltage of 12V and a continuous drain current of 9.2A @ 25°C.

Maximum Rds On: 17 mOhm @ 9.2A and 4.5V
Maximum Gate Charge: 57nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Gate-Source Threshold Voltage: 900mV @ 250μA
Maximum Input Capacitance: 3450pF @ 10V
Technology: SMD/SMT
Category: Transistors - FETs, MOSFETs - Arrays
Status: Commonly Used
Supply and Demand Status: Balance

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