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IRF7329TRPBF real image276 IRF7329TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRF7329TRPBF real image276 IRF7329TRPBF Real Image
IRF7329TRPBF real image276 IRF7329TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7329TRPBF

Part No IRF7329TRPBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2P-CH 12V 9.2A 8-SOIC
Datasheet
IRF7329TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel(TR)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 9.2A
Rds On (Max) @ Id, Vgs 17 mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Gate Charge (Qg) @ Vgs 57nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3450pF @ 10V
Power - Max 2W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 017507-IRF7329TRPBF
Family Name IRF7329
Introduction Date January 29, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date Not Applicable
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7329TRPBF CAD Model

Description

The Infineon Technologies 017507-IRF7329TRPBF is a dual P-Channel MOSFET with a drain-source voltage of 12V and a continuous drain current of 9.2A @ 25°C.

  • Maximum Rds On: 17 mOhm @ 9.2A and 4.5V
  • Maximum Gate Charge: 57nC @ 4.5V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Input Capacitance: 3450pF @ 10V
  • Technology: SMD/SMT
  • Category: Transistors - FETs, MOSFETs - Arrays
  • Status: Commonly Used
  • Supply and Demand Status: Balance

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154+ $1.9549 $301.0546
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