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Same model may have multiple batches, images only for reference.
SI7964DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7964DP-T1-GE3

Part No SI7964DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 6.1A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Standard
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 6.1A
Rds On (Maximum) at Id, Vgs 23mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 10V
Maximum Power 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package PowerPAK SO-8 Dual
Supplier Device Package PowerPAK SO-8 Dual
Family Part Number SI7964
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 720351-SI7964DP-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7964DP-T1-GE3 CAD Model

Description

The SI7964DP-T1-GE3 is a dual N-channel MOSFET that is designed for use in a wide range of applications, including power supplies, motor control, and more.

  • Manufacturer: Vishay Siliconix
  • Maximum Drain-Source Voltage: 60V
  • Maximum Continuous Drain Current: 6.1A
  • Package: PowerPAK SO-8 Dual
  • Compliance: RoHS
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8147 $59.1087
50+ $2.3100 $115.5000
78+ $2.2384 $174.5952
107+ $2.1656 $231.7192
138+ $2.0940 $288.9720
185+ $1.8769 $347.2265
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Availability: 8,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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