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SIR124DP-T1-RE3

Part No SIR124DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 16.1A/56.8A PPAK / N-Channel 80 V 16.1A (Ta), 56.8A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 16.1A (Ta), 56.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1666 pF @ 40 V
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR124
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIR124DP-T1-RE3CT,SIR124DP-T1-RE3TR,SIR124DP-T1-RE3DKR
Standard Package 3,000
Win Source Part Number 971059-SIR124DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR124DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIR124DP-T1-RE3 is a N-Channel MOSFET transistor that is part of the TrenchFET Gen IV series.

  • Package: PowerPAK SO-8
  • Packaging: Tape and reel
  • Maximum Power Dissipation: 5W (Ta), 62.5W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7136 $60.6560
200+ $0.5856 $117.1200
310+ $0.5673 $175.8630
425+ $0.5490 $233.3250
545+ $0.5306 $289.1770
730+ $0.4758 $347.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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