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Same model may have multiple batches, images only for reference.
SI7911DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7911DN-T1-E3

Part No SI7911DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.2A 1212-8
Datasheet
SI7911DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A
Maximum Rds On at Id,Vgs 51 mOhm @ 5.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 108599-SI7911DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI7911DN-T1-E3 CAD Model

Description

The SI7911DN-T1-E3 P-channel MOSFET from Vishay is a dual FET that has a maximum power dissipation of 1.3W.

  • Power Dissipation: 1.3W
  • Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.2A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 15nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
  • Case/Package: PowerPAK 1212-8 dual
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3534 $58.3110
400+ $0.2899 $115.9600
620+ $0.2807 $174.0340
855+ $0.2714 $232.0470
1,100+ $0.2633 $289.6300
1,475+ $0.2356 $347.5100
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