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Same model may have multiple batches, images only for reference.
SI8902EDB-T2-E1 Vishay
Same model may have multiple batches, images only for reference.

SI8902EDB-T2-E1

Part No SI8902EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 3.9A 6-MFP
Datasheet
SI8902EDB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.9A
Gate-Source Threshold Voltage 1V @ 980μA
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-Micro Foot
Win Source Part Number 028709-SI8902EDB-T2-E1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8902EDB-T2-E1 CAD Model

Description

The Vishay SI8902EDB-T2-E1 is a dual N-channel common drain FET designed for logic level gate applications.

  • Package: 6-micro foot
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.9A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 980μA
  • Product Status: Active
  • Industry Usage: Widely Used

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4967 $59.6040
285+ $0.4077 $116.1945
440+ $0.3950 $173.8000
605+ $0.3823 $231.2915
785+ $0.3696 $290.1360
1,050+ $0.3315 $348.0750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,800 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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