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Same model may have multiple batches, images only for reference.
SI8415DB-T1-E1 Vishay
Same model may have multiple batches, images only for reference.

SI8415DB-T1-E1

Part No SI8415DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.3A 2X2 4-MFP
Datasheet
SI8415DB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 37 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 103036-SI8415DB-T1-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8415DB-T1-E1 CAD Model

Description

The electronic component with Id 330174 is a MOSFET from Vishay manufacturer.

  • Mounting: SMD (SMT)
  • Polarity: P-Channel
  • Power Dissipation (Max): 1.47W (Ta)
  • Continuous Drain Current @ 25°C: 5.3A (Ta)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3587 $59.1855
395+ $0.2943 $116.2485
610+ $0.2852 $173.9720
840+ $0.2760 $231.8400
1,085+ $0.2667 $289.3695
1,450+ $0.2391 $346.6950
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Availability: 14,600 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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