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SI7886DP

Part No SI7886DP
Manufacturer Vishay
Catalog FETs - Single
Description N-Channel 30-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190120-SI7886DP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7886DP CAD Model

Description

The SI7886DP is a P-Channel 20-V (D-S) MOSFET from Vishay Siliconix, designed for load switching and other power management applications. It is optimized for low on-resistance, enabling efficient power conversion and minimizing power loss in portable devices and systems.

Applications:

  • Load Switching: Ideal for high-side load switching in battery-powered devices.
  • Power Management: Used in DC-DC converters and power management circuits.
  • Portable Devices: Suitable for smartphones, tablets, and other portable electronics.
  • Battery Management: Employed in battery charging and discharging circuits.
  • Motor Control: Low-power motor control applications.

Features:

  • Low On-Resistance: Minimizes conduction losses for improved efficiency.
  • Low Threshold Voltage: Enables operation with low gate drive voltage.
  • TrenchFET® Power MOSFET: Utilizes advanced trench technology for high power density.
  • 20V Drain-Source Voltage: Suitable for applications up to 20V.
  • Small Footprint: Available in a space-saving powerPAK® SO-8 package.

Benefits:

  • High Efficiency: Reduced power loss leads to improved efficiency in power conversion.
  • Extended Battery Life: Lower power consumption extends battery life in portable devices.
  • Compact Design: Small package size allows for dense circuit designs.
  • Simplified Drive Circuitry: Low threshold voltage simplifies gate drive requirements.
  • Improved Thermal Performance: PowerPAK® SO-8 package offers enhanced thermal dissipation.

Additional Details:

The SI7886DP features a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The on-resistance (RDS(on)) is typically very low, enhancing the device's efficiency. The operating junction temperature range is typically -55°C to +150°C. It is available in a PowerPAK® SO-8 package, ensuring efficient thermal management. This MOSFET is designed to be RoHS-compliant and halogen-free, aligning with environmental standards.

The SI7886DP's low on-resistance and compact package make it an excellent choice for efficient power management in a variety of applications, particularly in portable devices where battery life is critical. Its robust design and compliance with environmental standards further enhance its suitability for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8181 $53.1765
150+ $0.6713 $100.6950
235+ $0.6503 $152.8205
320+ $0.6294 $201.4080
415+ $0.6084 $252.4860
555+ $0.5454 $302.6970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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