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HAT2192WP-EL-E

Part No HAT2192WP-EL-E
Manufacturer Renesas Electronics America
Catalog FETs - Single
Description Silicon N Channel Power MOS FET Power Switching | MOSFET N-CH 250V 10A WPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 230mOhm at 5A, 10V
Gate Charge (Qg) (Maximum) at Vgs 15nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 710pF at 25V
Power Dissipation (Maximum) 25W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-WPAK
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1178715-HAT2192WP-EL-E
Manufacturer Homepage www.renesas.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2192WP-EL-E CAD Model

Description

The Renesas Electronics America HAT2192WP-EL-E is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Package: 8-PowerWDFN
  • Drive Voltage: 10V
  • Temperature Range: 150°C
  • Power Dissipation: 25W
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 2,500
  • MSL Level: 1 (unlimited)
  • Vds: 250V
  • Continuous Drain Current: 10A
  • Rds On (maximum) @ Id, Vgs: 230mOhm @ 5A, 10V
  • Gate Charge: 15nC @ 10V
  • Gate Source Voltage (maximum): ±30V
  • Input Capacitance (Ciss) (maximum) @ Vds: 710pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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