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Same model may have multiple batches, images only for reference.
IXFN200N07 Real Image
Same model may have multiple batches, images only for reference.

IXFN200N07

Part No IXFN200N07
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 70V 200A SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 70V
Id - Continuous Drain Current 200A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 480nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9000pF at 25V
Power Dissipation (Maximum) 520W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Chassis Mount
Supplier Device Package SOT-227B
Manufacturer Package SOT-227-4, miniBLOC
Manufacturer Pack Quantity 10
MSL Level Not Applicable
Win Source Part Number 1191111-IXFN200N07
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFN200N07 CAD Model

Description

The IXYS 1191111-IXFN200N07 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 70V and a continuous drain current of 200A.

  • Maximum Rds On: 6mOhm @ 500mA and 10V gate-source voltage
  • Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 480nC @ 10V
  • Input Capacitance: 9000pF @ 25V
  • Package: SOT-227B
  • Power Dissipation: 520W
  • Operating Temperature: -55°C to 150°C
  • Ideal for: Discrete semiconductor products

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