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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 950V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 630pF at 100V
Power Dissipation (Maximum) 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262334-STW10N95K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW10N95K5 CAD Model

Description

STW10N95K5 - N-channel 950 V, 0.22 ohm typ., 10 A MDmesh™ K5 Power MOSFET in a TO-247 package

The STW10N95K5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to meet the high efficiency and reliability demands of modern power electronics. This device is a part of ST's MDmesh™ K5 series which utilizes innovative technology to achieve outstanding performance in terms of low on-resistance, high blocking voltage, and reduced gate charge.

This Power MOSFET is built using an advanced MDmesh™ K5 technology which combines the advantages of reduced on-resistance and fast switching with the high voltage capability. It has a drain-source voltage (V<sub>DS) of 950 V, which ensures that it can handle high voltage applications with ease. The device also boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.22 ohm typical, which contributes to its high efficiency by minimizing conduction losses.

With a continuous drain current (I<sub>D) of 10 A, the STW10N95K5 is capable of delivering significant power for a wide range of applications, from power supplies and converters to lighting and motor drives. Its TO-247 package is well-known for excellent thermal performance, making the MOSFET suitable for high power applications where heat dissipation is critical.

The STW10N95K5 also features a low gate charge (Q<sub>G), which simplifies the drive circuitry and reduces switching losses, further enhancing the overall efficiency of the system. The device is 100% avalanche tested, ensuring robustness and reliability even under harsh conditions.

For designers looking for a high-voltage, high-efficiency solution for their power management challenges, the STW10N95K5 offers a compelling choice. Its combination of cutting-edge technology, robust package, and superior electrical characteristics make it an ideal component for advanced power electronic systems.

With the STW10N95K5, STMicroelectronics continues its commitment to providing innovative semiconductor solutions that enable energy-saving, compact designs across a broad spectrum of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.0528 $56.7392
34+ $3.3255 $113.0670
53+ $3.2216 $170.7448
72+ $3.1176 $224.4672
93+ $3.0137 $280.2741
125+ $2.7019 $337.7375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 65,400 pieces
MOQ: 14 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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