IRFR320TR Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 3.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.8Ohm at 1.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187901-IRFR320TR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR320TR CAD Model

Description

The IRFR320TR is an N-channel MOSFET transistor manufactured by Vishay Siliconix. It has a power dissipation of 2.5W and a maximum drain-source breakdown voltage of 400V.

  • Transistor Type: N-Channel MOSFET
  • Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 400V
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Continuous Drain Current: 3.1A
  • Applications: Power management and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4490 $56.1250
270+ $0.4207 $113.5890
415+ $0.4064 $168.6560
595+ $0.3780 $224.9100
770+ $0.3638 $280.1260
965+ $0.3496 $337.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 27,550 pieces
MOQ: 125 pcs
Order Increment : 1 piece
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