IXTY02N120P Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 200mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 75Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 4.7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 104pF at 25V
Power Dissipation (Maximum) 33W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-252, (D-Pak)
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 70
MSL Level 1 (Unlimited)
Win Source Part Number 1191304-IXTY02N120P
Manufacturer Homepage www.ixys.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IXTY02N120P
Introduction Date October 08, 2009
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTY02N120P CAD Model

Description

The IXYS IXTY02N120P is a high-performance N-channel MOSFET transistor with a drain-source breakdown voltage of 1200V and a continuous drain current of 200mA.

  • On-State Resistance: 75Ohm maximum
  • Gate-Source Voltage: ±20V
  • Package: TO-252, (D-Pak)
  • Mounting Technology: surface mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7434 $57.6114
50+ $2.2510 $112.5500
78+ $2.1806 $170.0868
107+ $2.1103 $225.8021
138+ $2.0400 $281.5200
184+ $1.8290 $336.5360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 51,400 pieces
MOQ: 21 pcs
Order Increment : 1 piece
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