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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 26A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 125mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1781pF at 100V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262360-STW33N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW33N60M2 CAD Model

Description

The STW33N60M2 is a high-performance N-channel MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics. This state-of-the-art power MOSFET is engineered using an advanced proprietary technology that achieves the perfect balance between low on-resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), resulting in outstanding switching performance and high efficiency in a wide range of power applications.

Key Features

  • High Voltage Capability: With a maximum V<sub>DSS of 600V, the STW33N60M2 is suitable for high voltage applications, ensuring reliability and robustness in demanding conditions.
  • Low On-Resistance: Featuring a low R<sub>DS(on) of just 0.165 Ω, this MOSFET minimizes conduction losses, leading to higher efficiency in power conversion applications.
  • Reduced Gate Charge: The device's low Q<sub>g allows for faster switching speeds, reducing switching losses and improving overall performance in applications such as switch-mode power supplies.
  • 100% Avalanche Tested: Ensuring ruggedness and reliability, each device is subjected to an avalanche test, guaranteeing safe operation under extreme conditions.
  • Enhanced Body Diode: The STW33N60M2 features an improved body diode with faster recovery time, which is particularly beneficial in hard-switching applications.

Applications

The versatility of the STW33N60M2 makes it ideal for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Drives
  • Power Factor Correction (PFC) circuits
  • Lighting Applications

Package and Environmental Compliance

The STW33N60M2 is offered in a TO-247 long leads package, which is designed for optimal thermal performance and ease of mounting in various applications. Additionally, this product is compliant with environmental regulations, including RoHS and Halogen-free requirements, ensuring an eco-friendly approach to electronics design.

With its robust design and advanced features, the STW33N60M2 from STMicroelectronics is a superior choice for designers seeking performance, efficiency, and reliability in their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5114 $50.2280
49+ $2.0607 $100.9743
76+ $1.9963 $151.7188
104+ $1.9319 $200.9176
134+ $1.8675 $250.2450
180+ $1.6743 $301.3740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 32,000 pieces
MOQ: 20 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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