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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 700mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 420mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 1.3W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187573-IRFD9110
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFD9110 CAD Model

Description

The IRFD9110 is a P-channel MOSFET from Vishay Siliconix.

  • Package: 4-DIP, Hexdip, HVMDIP
  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 700mA
  • Rds On (Maximum) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 200pF @ 25V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.4090 $57.0450
12+ $9.3613 $112.3356
19+ $9.0688 $172.3072
26+ $8.7762 $228.1812
34+ $8.4837 $288.4458
45+ $7.6060 $342.2700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,304 pieces
MOQ: 5 pcs
Order Increment : 1 piece
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