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IRFD9110 Vishay

Same model may have multiple batches, images only for reference.

IRFD9110 Vishay

Same model may have multiple batches, images only for reference.

IRFD9110

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Part No	IRFD9110
Manufacturer	Vishay
Catalog	FETs - Single
Description	0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET \| MOSFET P-CH 100V 0.7A 4-DIP
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	700mA
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.2Ohm at 420mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	8.7nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	200pF at 25V
Power Dissipation (Maximum)	1.3W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Manufacturer Package	4-DIP
Manufacturer Pack Quantity	2,500
MSL Level	1 (Unlimited)
Win Source Part Number	1187573-IRFD9110
Manufacturer Homepage	www.intersil.com/cda/home
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian IRFD9110 CAD Model

Alternative Products

Description

The IRFD9110 is a P-channel MOSFET from Vishay Siliconix.

Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through-Hole
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 700mA
Rds On (Maximum) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8.7nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 200pF @ 25V
Category: Discrete Semiconductor Products
Status: Obsolete

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Quantity	Unit Price	Ext. Price
5+	$10.1866	$50.9330
12+	$8.3583	$100.2996
19+	$8.0971	$153.8449
26+	$7.8359	$203.7334
34+	$7.5747	$257.5398
45+	$6.7911	$305.5995

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