The Vishay Siliconix MOSFET is a N-Channel transistor with a Vds - Drain-Source Breakdown Voltage of 1000V and a Id - Continuous Drain Current of 3.1A.

• Manufacturer: Vishay Siliconix
• Transistor Type: N-Channel
• Vds - Drain-Source Breakdown Voltage: 1000V
• Id - Continuous Drain Current: 3.1A
• Rds On (Maximum) @ Id, Vgs: 5Ohm @ 1.9A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 980pF @ 25V
• Power Dissipation (Maximum): 125W
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Applications: Audio, Signal Processing, Industrial applications
• Package: TO-220-3
• Packaging: Tube
• Status: Obsolete
• Operating Temperature: -55°C to 150°C