The 26NM60N is a state-of-the-art power MOSFET produced by STMicroelectronics, one of the leading manufacturers in the semiconductor industry. This device is part of the MDmesh™ series, which is well-known for its excellent on-state resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), making it an exceptional choice for high-efficiency applications.
Key Features
- Low Threshold Voltage: The 26NM60N boasts a low threshold voltage, ensuring that it can be driven at lower gate voltages, which is beneficial for low-power applications and reduces overall power consumption.
- High Current Capability: With a continuous drain current (I<sub>D) rating, this MOSFET can handle significant current, making it suitable for demanding power applications.
- MDmesh™ Technology: The device utilizes STMicroelectronics' innovative MDmesh™ technology, which combines a vertical structure with a new proprietary strip layout to yield one of the best R<sub>DS(on) per area ratios.
- 100% Avalanche Tested: Ensuring reliability and performance under extreme conditions, the 26NM60N is 100% avalanche tested, which means it can withstand high-energy pulses.
Applications
The versatile nature of the 26NM60N makes it well-suited for a wide array of applications. It is commonly used in:
- Switch Mode Power Supplies (SMPS)
- High Efficiency DC-DC Converters
- Motor Control Systems
- LED Lighting Solutions
- Automotive and Industrial Applications
Technical Specifications
Parameter
Value
V<sub>DSS
600V
I<sub>D
20A
R<sub>DS(on)
0.165Ω
Q<sub>g
47nC
Overall, the 26NM60N from STMicroelectronics is an excellent choice for engineers looking to improve the efficiency and reliability of their power management systems. Its advanced features and robust design ensure optimal performance for a broad range of electronic devices.
