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IRFBE20

Name: IRFBE20
Brand: Vishay
SKU: 604854
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFBE20
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) \| MOSFET N-CH 800V 1.8A TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	800V
Id - Continuous Drain Current	1.8A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	6.5Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	38nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	530pF at 25V
Power Dissipation (Maximum)	54W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	1,000
MSL Level	1 (Unlimited)
Win Source Part Number	1187542-IRFBE20
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFBE20 CAD Model

Description

The Vishay Siliconix IRFBE20 is an N-channel MOSFET transistor that is used for switching and amplifying electronic signals.

Drain-Source Breakdown Voltage: 800V
Maximum Rds On @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Gate-Source Voltage(th) (maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (maximum) @ Vgs: 38nC @ 10V
Package: TO-220AB
Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.2931	$58.1895
110+	$1.0611	$116.7210
170+	$1.0280	$174.7600
235+	$0.9948	$233.7780
305+	$0.9617	$293.3185
405+	$0.8622	$349.1910

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 15,800 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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