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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 1.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.5Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 530pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187542-IRFBE20
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBE20 CAD Model

Description

The Vishay Siliconix IRFBE20 is an N-channel MOSFET transistor that is used for switching and amplifying electronic signals.

  • Drain-Source Breakdown Voltage: 800V
  • Maximum Rds On @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
  • Gate-Source Voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 38nC @ 10V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9855 $51.6230
62+ $1.6291 $101.0042
96+ $1.5782 $151.5072
131+ $1.5273 $200.0763
170+ $1.4764 $250.9880
227+ $1.3237 $300.4799
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 23,500 pieces
MOQ: 26 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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