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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.7Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187550-IRFBF30
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBF30 CAD Model

Description

The IRFBF30 is an N-Channel MOSFET transistor that is manufactured by Vishay Siliconix.

  • Popularity: Medium-popularity
  • Supply and Demand Status: Limited
  • Mounting: Through-hole
  • Package: TO-220AB
  • Win Source Part Number: 1187550-IRFBF30
  • Manufacturer Homepage: www.irf.com
  • Power Dissipation: 125W
  • Drain-Source Breakdown Voltage: 900V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1862 $50.9792
39+ $2.6144 $101.9616
60+ $2.5327 $151.9620
82+ $2.4510 $200.9820
106+ $2.3693 $251.1458
142+ $2.1242 $301.6364
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 370 pieces
MOQ: 16 pcs
Order Increment : 1 piece
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