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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2300pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187817-IRFPC50LC
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFPC50LC CAD Model

Description

The Vishay Siliconix MOSFET is a N-channel transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 11A.

  • Package Style: TO-247-3
  • Mounting Style: through-hole
  • Power Dissipation: 190W
  • Gate-Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg): 84nC @ 10V
  • Input Capacitance (Ciss): 2300pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 600mOhm @ 6.6A, 10V
  • Temperature Range: -55°C to 150°C
  • Product Status: obsolete
  • Supply and Demand Status: limited
  • Manufacturer Pack Quantity: 500

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