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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 25V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187526-IRFBC30
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30 CAD Model

Description

The Vishay Siliconix MOSFET is a high-performance N-Channel transistor designed for use in Discrete Semiconductor Products.

  • Channel Type: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 3.6A
  • Rds On (Maximum) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V
  • Mounting: Through Hole
  • Package: TO-220AB
  • Power Dissipation (Maximum): 74W

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8486 $50.9160
145+ $0.6963 $100.9635
225+ $0.6745 $151.7625
310+ $0.6528 $202.3680
400+ $0.6310 $252.4000
535+ $0.5657 $302.6495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 40,000 pieces
MOQ: 60 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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