The IRFB9N65A is a N-Channel MOSFET transistor manufactured by Vishay Siliconix.

• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current: 8.5A
• Maximum Rds On @ Id, Vgs: 930mOhm @ 5.1A, 10V
• Gate-Source Voltage(th) (maximum) @ Id: 4V @ 250μA
• Gate Charge (Qg) (maximum) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (maximum) @ Vds: 1417pF @ 25V
• Package: TO-220AB package
• Suitable for use in: discrete semiconductor products.
• Drive Voltage (max Rds On, Min Rds On): 10V
• Power Dissipation (maximum): 167W
• Status: Obsolete and has a medium popularity in the market.