The PHD95N03LT is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is part of NXP's portfolio of TrenchMOS™ logic level FETs, which are known for their high efficiency and performance in a wide range of electronic applications.
Key Features
- Low Threshold Voltage: The device features a low threshold voltage, making it suitable for logic level applications where low voltage operation is critical.
- High Efficiency: With its TrenchMOS technology, the PHD95N03LT offers high efficiency, which is essential for power management in modern electronic devices.
- High-Speed Switching: The MOSFET is designed for high-speed switching applications, providing improved performance for power conversion and regulation.
- Robust Thermal Performance: The device is encapsulated in a TO-252 (DPAK) surface-mounted package, which offers excellent thermal conduction and heat dissipation.
- Low On-Resistance (R<sub>DS(on)): This parameter is a critical feature that ensures minimal power loss and heat generation during operation.
Applications
The PHD95N03LT is an ideal choice for a variety of applications, including:
- DC/DC converters
- Power management systems
- Motor control circuits
- Switching regulators
- Computing and server power supplies
Technical Specifications
Parameter
Value
Drain-source voltage (V<sub>DS)
30V
Continuous drain current (I<sub>D)
75A
Power dissipation (P<sub>D)
110W
R<sub>DS(on)
8.5 mΩ
With its robust design, high efficiency, and excellent thermal performance, the PHD95N03LT is a reliable component for engineers looking to enhance the performance of their power management systems and other high-efficiency electronic applications.
