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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 630mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 380mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1187564-IRFD224
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD224 CAD Model

Description

The IRFD224 MOSFET manufactured by Vishay Siliconix is a high-quality transistor that is designed to provide reliable performance in a variety of electronic devices.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 250 V
  • Package: Tube of 100 pieces
  • Manufacturer's Package: 4-DIP
  • Power Dissipation: 1 W
  • Gate-Source Voltage: ±20 V
  • Input Capacitance: 260 pF @ 25 VDS
  • Gate Charge: 14 nC @ 10 VGS
  • Category: Discrete Semiconductor Products
  • Popularity Rating: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3579 $65.5053
17+ $7.6788 $130.5396
27+ $7.4383 $200.8341
36+ $7.1989 $259.1604
47+ $6.9582 $327.0354
63+ $6.2391 $393.0633
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,100 pieces
MOQ: 7 pcs
Order Increment : 1 piece
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